AVS 53rd International Symposium
    Applied Surface Science Thursday Sessions
       Session AS-ThP

Paper AS-ThP21
Aluminum Induced Crystallization (AIC) of Amorphous Silicon

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Aspects of Applied Surface Science Poster Session
Presenter: H.M. Meyer, Oak Ridge National Laboratory
Authors: H.M. Meyer, Oak Ridge National Laboratory
K. Sharif, University of Arkansas
H. Naseem, University of Arkansas
H.H. Abu-Safe, University of Arkansas
W.D. Brown, University of Arkansas
Correspondent: Click to Email
A process for producing epitaxial Si thin films using the method of aluminum induced crystallization (AIC) of amorphous silicon (a-Si) was investigated. AIC holds promise for producing polycrystalline Si (p-Si) on inexpensive glass and plastic substrates. TEM and Auger analysis have shown that these efforts were successful. Initial results from Auger depth profiles showed that while we achieved a good measure of the composition versus depth, reproducing the data was difficult, even from a small area on the same sample. The complexity of these systems was revealed by interrupting the depth profiles and mapping the lateral distribution of Si, Al, and O. These 2-D maps readily showed that the distribution was more complex than anticipated. A second set of samples, prepared to bracket the optimum AIC anneal time for a given temperature, was analyzed by Auger microanalysis to further explore the nature of the Al/Si intermixing. All of the samples for this group were prepared by depositing a 300 nm Al layer onto the Si wafer, followed by a 300 nm layer of a-Si. This poster will present results for samples annealed at 525°C for times ranging from 0 min to 120 min. Auger elemental maps of a cross-section for a sample no annealing showed individual layers, with a-Si on top. Depth profiles for annealed samples clearly show changes occurring on the surface after 10 min of annealing and that further annealing drives the AIC process. Research sponsored by the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of FreedomCAR and Vehicle Technologies, as part of the High Temperature Materials Laboratory User Program, Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy under contract number DE-AC05-00OR22725.