AVS 53rd International Symposium
    Applied Surface Science Thursday Sessions
       Session AS-ThP

Paper AS-ThP19
Large-Area Pulsed-Laser-Deposition of Dielectric and Ferroelectric Thin Films

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Aspects of Applied Surface Science Poster Session
Presenter: S. Sakai, National Institute of Advanced Industrial Science and Technology, Japan
Authors: S. Sakai, National Institute of Advanced Industrial Science and Technology, Japan
M. Takahashi, National Institute of Advanced Industrial Science and Technology, Japan
K. Motohashi, National Institute of Advanced Industrial Science and Technology, Japan
Y. Yamaguchi, National Institute of Advanced Industrial Science and Technology, Japan
N. Yui, National Institute of Advanced Industrial Science and Technology, Japan
T. Kobayashi, National Institute of Advanced Industrial Science and Technology, Japan
Correspondent: Click to Email
Pulsed laser deposition (PLD) is a successful method for obtaining high quality films of various kinds of materials, and has an advantage of clean deposition without impurities of undesired element (e.g., carbon) in the films. However, the PLD method tends to show poor uniformity of film thickness mainly due to small laser-ablation plume, thus PLD has not been regarded as a good method for large-area thin-film depositions. In order to improve the thickness uniformity, we recently developed the PLD technology using a prototype machine of VPLD-8000 (Vacuum Products Co Ltd) and succeeded in depositing large-area films of high-k dielectric HfO@sub2@ and ferroelectric SrBi@sub2@Ta@sub2@O@sub9@ (SBT) on Si wafers. In this work, we demonstrate good thickness uniformity of 8 and 6inch HfO@sub2@ and 4inch SBT films. The HfO@sub2@ was deposited at room temperature in 13Pa N@sub2@. The SBT was deposited at 400°C in 13Pa O@sub2@. Standard deviations of the thicknesses all over the 42nm-thick 8inch HfO@sub2@, 6nm-thick 6inch HfO@sub2@, and 94nm-thick 4inch SBT were 1.3%, 1.6%, and 1.2%, respectively. Cross-sectional TEM showed that an interfacial layer between HfO@sub2@ and Si was thinner than 1nm in the 6nm-thick 6inch HfO@sub2@. Standard deviation of accumulation-mode capacitances was 1.9% for Pt/HfO@sub2@/Si MIS diodes, which were fabricated by evaporating Pt top electrodes on a diametrical line of the 6nm-thick 6inch HfO@sub2@ and annealing at 700°C in N@sub 2@ for 10 min. In our PLD technique, KrF laser beam is aligned parallel to a face-down substrate surface, and a 3x12cm@super2@ ceramic target is set to be inclined to the substrate surface by 30°. Since the substrate does not block off the incident laser beam, available Si wafer size is easily extendable to 300mm in diameter. Therefore, our developed PLD technique meets industrial needs of high and uniform qualities over large area of high-k dielectric and/or ferroelectric thin films for LSIs.