AVS 53rd International Symposium
    Applied Surface Science Thursday Sessions
       Session AS-ThP

Paper AS-ThP16
Stress in FIB Exposed Si

Thursday, November 16, 2006, 5:30 pm, Room 3rd Floor Lobby

Session: Aspects of Applied Surface Science Poster Session
Presenter: K.M. Archuleta, Sandia National Labs
Authors: K.M. Archuleta, Sandia National Labs
D.P. Adams, Sandia National Labs
M.J. Vasile, Sandia National Labs
J.E. Fulghum, University of New Mexico
P.G. Kotula, Sandia National Labs
Correspondent: Click to Email
Focused Ion Beam (FIB) systems are increasingly utilized for the milling of micro-tools and building of architectures on the nano-scale. It is thus critical to understand the impact of FIB milling on the properties of relevant materials. In this study, high energy (30 kev) focused gallium ion beams are used to expose silicon samples. The samples are then removed and analyzed using ex-situ techniques. Compressive stress due to FIB shaping of silicon is investigated through atomic force microscopy (AFM), optical interferometry, tunneling electron microscopy (TEM) and x-ray photoelectron spectroscopy (XPS) measurements.