AVS 53rd International Symposium
    Applied Surface Science Thursday Sessions
       Session AS-ThM

Paper AS-ThM9
SIMS Measurements of C contamination in SOI

Thursday, November 16, 2006, 10:40 am, Room 2005

Session: Ultra Thin Films and Buried Interfaces
Presenter: M.H. Yang, Evans Analytical Group
Authors: M.H. Yang, Evans Analytical Group
L. Wang, Evans Analytical Group
L. Li, Evans Analytical Group
Correspondent: Click to Email
SIMS have been shown as a powerful technique to distinguish SOI metal contamination and dopant distributions on surface, in the upper Si layer, in the BOX and at the BOX/Si substrate interface with excellent detection limits.@footnote 1,2@ C measurements in SiO2 has been a challenge for SIMS because in situ carbon absorption in the oxide during SIMS measurements. With improved charge neutralization and special treatment of SOI sample surface including advanced polishing, we are able to achieve C detection in SiO2 at ~1E+17 atoms/cm3 for samples with SOI thickness greater than 10 microns.. We are also able to reduce the surface C tailing effect by an order of magnitude, and achieve better detection of C in the SiO2 BOX and their interfaces for samples with thickness less than 100nm. @FootnoteText@ @footnote 1@Ming Hong Yang, Alice Wang, Monica Neuburger, and R. S. Hockett, "SIMS Measurements of Metal Contamination in SOI," in Silicon-on-Insulator Technology and Devices XII, edited by G. K. Celler, S. Cristoloveanu, F. Gamiz, J. G. Fossum and K. Izumi, Electrochemical Society PV 2005-03, pp. 149-154 (2005). @footnote 2@Stephen P. Smith, Shaw Wang, Ihab Abdelrehim, and R. S. Hockett, "SIMS Measurements of Dopants in SOI Wafers," in Silicon-on-Insulator Technology and Devices XII, edited by G. K. Celler, S. Cristoloveanu, F. Gamiz, J. G. Fossum and K. Izumi, Electrochemical Society PV 2005-03, pp. 363-370 (2005).