AVS 53rd International Symposium
    Applied Surface Science Thursday Sessions
       Session AS-ThM

Paper AS-ThM2
Film Thickness Determination of Ultra Thin HfO@sub 2@ Dielectrics with Angle Resolved XPS

Thursday, November 16, 2006, 8:20 am, Room 2005

Session: Ultra Thin Films and Buried Interfaces
Presenter: W.S.M. Werner, Vienna University of Technology, Austria
Authors: W.S.M. Werner, Vienna University of Technology, Austria
W. Smekal, Vienna University of Technology, Austria
D.W. Moon, Korean Research Institute for Standards and Science
K.J. Kim, Korean Research Institute for Standards and Science
C.J. Powell, National Institute of Standards and Technology
Correspondent: Click to Email
Reflection electron energy loss spectra (REELS) have been measured for medium energy (300-3400 eV) electrons reflected from solid Si, SiO@sub 2@ and HfO@sub 2@-surfaces. The normalized differential probability for surface and volume excitations was extracted from these data. Furthermore, the total inelastic mean free path (IMFP) for volume scattering as well as the total surface excitation probability (SEP) for a single surface crossing were determined. Measured angle-resolved XPS spectra of thin HfO@sub 2@ films on amorphous Si were analyzed using the experimental electron scattering data. The experimental spectra were compared with model calculations using the SESSA software providing a verification of the commonly employed models for overlayer thickness determination with XPS. Guidelines are given for the optimum experimental conditions and parameters to use in the analysis of angle resolved XPS measurements of ultrathin dielectric films.@footnote 1@ @FootnoteText@ W. Smekal, W. S. M. Werner and C. J. Powell, Surf. Interface Anal. 37(2005)1059@footnote 2@ http://www.nist.gov/srd/nist100.htm