AVS 53rd International Symposium
    Applied Surface Science Friday Sessions
       Session AS-FrM

Paper AS-FrM2
Chemical Vapor Deposition of WN@sub x@C@sub y@ from Cl@sub 3@[Me@sub 2@NC(N@super i@Pr)@sub 2@]W(N@super i@Pr): Film Characterization and Evaluation for Diffusion Barrier Application

Friday, November 17, 2006, 8:20 am, Room 2005

Session: Thin Film Characterization
Presenter: H.A. Ajmera, University of Florida
Authors: H.A. Ajmera, University of Florida
A.T. Heitsch, University of Florida
L.L. Reitfort, University of Florida
C.B. Wilder, University of Florida
L. McElwee-White, University of Florida
T.J. Anderson, University of Florida
Correspondent: Click to Email
The tungsten isopropyl guanidinato complex Cl@sub 3@[Me@sub 2@NC(N@super i@Pr)@sub 2@]W(N@super i@Pr) (designated as 1) was used to deposit tungsten nitride carbide (WN@sub x@C@sub y@) thin films in a CVD reactor with deposition temperature ranging from 400 to 750 °C. The effect of deposition temperature on film properties such as composition, crystallinity, lattice parameter, grain size, growth rate and resistivity was studied. Films grown with 1 were composed of W, N, C and O as determined by Auger electron spectroscopy (AES). Film growth rate varied between 3 Å/min and 35 Å/min. The apparent activation energy in kinetically controlled growth regime was 0.49 eV. The films deposited below 500 °C were amorphous while films deposited at and above 500 °C were polycrystalline, with the peak position indicating presence of @beta@-WN@sub x@C@sub y@ phase. Bonding information obtained from X-ray photoelectron spectroscopy (XPS) confirmed the presence of WN@sub x@C@sub y@ phase in the film. Films deposited with 1 had a relatively small grain size (< 50 Å). To evaluate the efficacy of the deposited films as diffusion barriers, WN@sub x@C@sub y@ thin film were coated with PVD Cu and vacuum annealed at 500 °C for 30 min. AES depth profiling and X-ray diffraction techniques were used to check for Cu diffusion through the barrier. WN@sub x@C@sub y@ films deposited at 450 and 500 °C prevented Cu diffusion after vacuum annealing at 500 °C for 30 min. The film properties of thin films deposited with 1 and isopropyl imido complex Cl@sub 4@(RCN)W(N@super i@Pr) (2a, R = CH@sub 3@, 2b, R = Ph)@footnote 1@ were also compared to provide insight on the effect of imido and guanidinato ligands on film properties. @FootnoteText@ @footnote 1@ Bchir O.J., Johnston S.W., Cuadra A.C., Anderson T.J., Ortiz C.G., Brooks B.C., Powell D.H., McElwee-White L., J. Crystal Growth 249 (2003) 262-274.