| AVS 52nd International Symposium | |
| Thin Films | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:20pm | TF-WeA2 PECVD Silicon Nitride Nucleation Kinetics Impact on Device Scaling A. Raviswaran, P. Keswick, Cypress Semiconductor |
| 2:40pm | TF-WeA3 Invited Paper Transition Metal Diborides by CVD: Super-Conformal, Epitaxial, Diffusion Barrier, and Super-Hard Films J.R. Abelson, University of Illinois at Urbana-Champaign |
| 3:20pm | TF-WeA5 Sputter Deposition of Silicon Oxynitride for Waveguide Applications J.G. Sandland, A. Eshed, L.C. Kimerling, Massachusetts Institute of Technology |
| 3:40pm | TF-WeA6 ALD-like Deposition of High Quality SiO@sub 2@ Film at 200°C using Organic Silicon Source Gas and Highly Concentrated O@sub 3@ Gas T. Nishiguchi, N. Kameda, Y. Morikawa, M. Kekura, Meidensha Corporation, Japan, H. Nonaka, S. Ichimura, National Institute of Advanced Industrial Science and Technology, Japan |
| 4:00pm | TF-WeA7 Strontium Oxide Template Monolayers by Surface Reactions of Metal-Organic Precursors with Si(100) A.C. Cuadra, D. Skliar, B.G. Willis, University of Delaware |
| 4:20pm | TF-WeA8 Texture Evolution during Shadowing Growth of Ru Nanorods F. Tang, T. Karabacak, G. Churamani, G.-C. Wang, T.-M. Lu, Rensselaer Polytechnic Institute |
| 4:40pm | TF-WeA9 Microstructural Characterization of Single Crystal Ferromagnetic Shape Memory Films T.C. Shih, S. McKernan, S.K. Srivastava, J.Q. Xie, R.D. James, T.W. Shield, C.J. Palmstrom, University of Minnesota |
| 5:00pm | TF-WeA10 Vinyltrimethylsilane (VTMS) as a Probe of Chemical Reactivity and Surface Structure of a TiCN Diffusion Barrier Deposited on Silicon L. Pirolli, A.V. Teplyakov, University of Delaware |