AVS 52nd International Symposium | |
Surface Science | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:20am | SS2-ThM1 Dissociative Chemisorption of SiH@sub 4@ on Si(100): Threshold Energy and Mechanism H.L. Abbott, University of Virginia, D.F. Kavulak, University of California, Berkeley, I. Harrison, University of Virginia |
8:40am | SS2-ThM2 Organic Functionalization of Semiconductors Using Amino Acids; Quantum Resonance Coupling and Electron Transport Effects G.D. Guilluame, G. Zhang, C.B. Musgrave, Stanford University |
9:00am | SS2-ThM3 Amide Chemistry at the Ge(100)-2x1 Interface A.J. Keung, M.A. Filler, S.F. Bent, Stanford University |
9:20am | SS2-ThM4 Layer-by-Layer Growth on Ge(100) via Spontaneous Chemical Reaction A. Kim, Korea Advanced Institute of Science and Technology (KAIST), Korea, M.A. Filler, S.F. Bent, Stanford University, S. Kim, KAIST, Korea |
9:40am | SS2-ThM5 Alkylation of Silicon and Germanium Surfaces S. Rivillon, Y.J. Chabal, Rutgers University |
10:00am | SS2-ThM6 Correlation of Surface Electronic Structure with Organic Reactivity on Si(114) D.E. Barlow, A.R. Laracuente, L.J. Whitman, J.N. Russell, Naval Research Laboratory |
10:20am | SS2-ThM7 Invited Paper Contact Formation with a Single Molecule: 1,3-cyclohexadiene on the Si(100) Surface B. Naydenov, L.C. Teague, P. Ryan, J.J. Boland, Trinity College Dublin, Ireland |
11:00am | SS2-ThM9 Surface Functionalization of Si(100)2x1 by Halogenated Ethylenes: Formation of C2-dimer, Vinylene, Vinylidene, and their Halogenated Derivatives K.T. Leung, X.J. Zhou, University of Waterloo, Canada |
11:20am | SS2-ThM10 Infrared Spectroscopy Study of Adsorption of Maleic Anhydride on Si(100) Y. Kimura, H. Ishii, M. Niwano, Tohoku University, Japan |
11:40am | SS2-ThM11 Formation of Unsaturated Hydrocarbon Moieties on Hydrogen-terminated Si(111) by Grignard Reaction T. Yamada, K. Shirasaka, M. Noto, H.S. Kato, RIKEN, Japan, M. Kawai, RIKEN and The University of Tokyo, Japan |