AVS 52nd International Symposium
    Surface Science Thursday Sessions
       Session SS2-ThM

Paper SS2-ThM5
Alkylation of Silicon and Germanium Surfaces

Thursday, November 3, 2005, 9:40 am, Room 202

Session: Functionalization of Semiconductor Surfaces
Presenter: S. Rivillon, Rutgers University
Authors: S. Rivillon, Rutgers University
Y.J. Chabal, Rutgers University
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Chemical modification of semiconductor surfaces is used to modify the surface properties and to provide new functionality. In particular, the formation of self-assembled monolayers (SAM) can lead to a broad range of applications such as micromechanical systems (MEMS), biosensors, lithography, and growth of alternative dielectrics without an interfacial oxide. To date, most work has been performed on silicon surfaces for which wet chemical cleaning methods have been well developed. In this talk, we focus on the alkylation of H- and Cl-terminated Ge surfaces, with close comparison to results of similar treatments on Si surfaces. Using infrared absorption (IR) spectroscopy, we have show that while HF-etched Si(100) and Ge(100) are atomically rough, the distribution of hydride species is different: hydrogen-terminated Si(100) exhibits mono-, di- and tri-hydride species, while H-Ge(100) only exhibit Ge-H and Ge-H@sub2@ species. The stability of both semiconductor surfaces to air is also different: for H-Si(100), oxygen is slowly incorporated into the substrate, forming O@sub3@-Si-H; for H-Ge(100), little oxidation takes place. Instead, hydrocarbons react with the hydrogen forming Ge@sub2@=CH@sub2@. This propensity of the Ge surfaces for alkylation has been used and comparison with silicon indicates that methoxylation takes place more rapidly on Ge surfaces.