AVS 52nd International Symposium | |
Plasma Science and Technology | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:20am | PS-ThM1 Plasma-Based Techniques to Reduce/Remove Particle Contamination for Pelicleless EUV and Imprint Lithography D.N. Ruzic, D.A. Alman, B.E. Jurczyk, H. Qiu, M.J. Neumann, University of Illinois at Urbana-Champaign |
8:40am | PS-ThM2 Plasma-Surface Reactions at a Spinning Wall P.F. Kurunczi, J. Guha, V.M. Donnelly, University of Houston |
9:00am | PS-ThM3 Innovative Strategy to Improve the Stability of Plasma Processes R. Ramos, G. Cunge, B. Pelissier, O. Joubert, CNRS/LTM, France |
9:20am | PS-ThM4 Interactions of Plasmas with Model Polymers for Advanced Photoresists S. Engelmann, X. Hua, T. Kwon, R. Phaneuf, G.S. Oehrlein, University of Maryland, Y.C. Bae, Rohm and Haas Electronic Materials, D.B. Graves, E. Paragon, University of California, Berkeley, E.A. Hudson, Lam Research Corp., P. Lazzeri, E. Iacob, M. Anderle, ITC-Irst, Italy |
9:40am | PS-ThM5 Decomposition Mechanisms of 193 nm Photoresist under Ar+ and Radical Bombardment E. Pargon, D. Nest, D.B. Graves, University of California at Berkeley, G.S. Oehrlien, S. Engelmann, X. Hua, University of Maryland, Y.C. Bae, Rohm and Haas Electronic Materials, L.L.C., E.A. Hudson, Lam Research Corporation |
10:00am | PS-ThM6 Investigation of Feature Surface Roughening using Plasma Beams Y. Yin, H.H. Sawin, MIT |
10:20am | PS-ThM7 3-Dimensional Feature Scale Profile Simulation of Sidewall Roughening During Plasma Etching H. Kawai, B. Bai, H.H. Sawin, Massachusetts Institute of Technology |
10:40am | PS-ThM8 Surface Modification of Photoresists in Electron Beam-Generated Plasma B. Orf, G.S. Oehrlein, University of Maryland at College Park, D. Leonhardt, S.G. Walton, US Naval Research Laboratory |
11:00am | PS-ThM9 Nanoscale Plasma Processing of Substrates Using Moving Patterned Shutter X. Hua, G.S. Oehrlein, University of Maryland, P. Lazzeri, M. Anderle, ITC-irst, Italy |
11:20am | PS-ThM10 Investigation of the Etching Characteristics of SrTiO@sub 3@ Films in Halogenated High-Density Plasmas L. Stafford, O. Langlois, Universite de Montreal, Canada, M. Gaidi, INRS-Energie, Materiaux et Telecommunications, Canada, J. Margot, Universite de Montreal, Canada, M. Chaker, INRS-Energie, Materiaux et Telecommunications, Canada, J. Saussac, Universite de Montreal, Canada |
11:40am | PS-ThM11 A Numerical Model for Profile Anomalies Caused by Surface Charging during Etching and Overetching of Polysilicon Y. Osano, K. Ono, Kyoto University, Japan |