AVS 52nd International Symposium
    Plasma Science and Technology Thursday Sessions

Session PS-ThM
Plasma-Surface Interactions II

Thursday, November 3, 2005, 8:20 am, Room 304
Moderator: W.M.M. Kessels, Eindhoven University of Technology, the Netherlands


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am PS-ThM1
Plasma-Based Techniques to Reduce/Remove Particle Contamination for Pelicleless EUV and Imprint Lithography
D.N. Ruzic, D.A. Alman, B.E. Jurczyk, H. Qiu, M.J. Neumann, University of Illinois at Urbana-Champaign
8:40am PS-ThM2
Plasma-Surface Reactions at a Spinning Wall
P.F. Kurunczi, J. Guha, V.M. Donnelly, University of Houston
9:00am PS-ThM3
Innovative Strategy to Improve the Stability of Plasma Processes
R. Ramos, G. Cunge, B. Pelissier, O. Joubert, CNRS/LTM, France
9:20am PS-ThM4
Interactions of Plasmas with Model Polymers for Advanced Photoresists
S. Engelmann, X. Hua, T. Kwon, R. Phaneuf, G.S. Oehrlein, University of Maryland, Y.C. Bae, Rohm and Haas Electronic Materials, D.B. Graves, E. Paragon, University of California, Berkeley, E.A. Hudson, Lam Research Corp., P. Lazzeri, E. Iacob, M. Anderle, ITC-Irst, Italy
9:40am PS-ThM5
Decomposition Mechanisms of 193 nm Photoresist under Ar+ and Radical Bombardment
E. Pargon, D. Nest, D.B. Graves, University of California at Berkeley, G.S. Oehrlien, S. Engelmann, X. Hua, University of Maryland, Y.C. Bae, Rohm and Haas Electronic Materials, L.L.C., E.A. Hudson, Lam Research Corporation
10:00am PS-ThM6
Investigation of Feature Surface Roughening using Plasma Beams
Y. Yin, H.H. Sawin, MIT
10:20am PS-ThM7
3-Dimensional Feature Scale Profile Simulation of Sidewall Roughening During Plasma Etching
H. Kawai, B. Bai, H.H. Sawin, Massachusetts Institute of Technology
10:40am PS-ThM8
Surface Modification of Photoresists in Electron Beam-Generated Plasma
B. Orf, G.S. Oehrlein, University of Maryland at College Park, D. Leonhardt, S.G. Walton, US Naval Research Laboratory
11:00am PS-ThM9
Nanoscale Plasma Processing of Substrates Using Moving Patterned Shutter
X. Hua, G.S. Oehrlein, University of Maryland, P. Lazzeri, M. Anderle, ITC-irst, Italy
11:20am PS-ThM10
Investigation of the Etching Characteristics of SrTiO@sub 3@ Films in Halogenated High-Density Plasmas
L. Stafford, O. Langlois, Universite de Montreal, Canada, M. Gaidi, INRS-Energie, Materiaux et Telecommunications, Canada, J. Margot, Universite de Montreal, Canada, M. Chaker, INRS-Energie, Materiaux et Telecommunications, Canada, J. Saussac, Universite de Montreal, Canada
11:40am PS-ThM11
A Numerical Model for Profile Anomalies Caused by Surface Charging during Etching and Overetching of Polysilicon
Y. Osano, K. Ono, Kyoto University, Japan