| AVS 52nd International Symposium | |
| Electronic Materials and Processing | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | EM1-TuM1 Invited Paper The Role of Defects at Nanoscale Semiconductor Interfaces Y.M. Strzhemechny, H.L. Mosbacker, M.J. Hetzer, M. Gao, B.D. White, The Ohio State University, D.C. Look, D.C. Reynolds, C.W. Litton, Wright-Patterson AFB, M.A. Contreras, A. Zunger, National Renewable Energy Laboratory, L.J. Brillson, The Ohio State University |
| 9:00am | EM1-TuM3 Interstitial Oxygen Related Defects and Current Leakage in UMOSFET on Epi/As++ Structure Q. Wang, M. Daggubati, H. Paravi, Fairchild Semiconductor, R. Yu, X. Zhang, Lawrence Berkeley National Laboratory |
| 9:20am | EM1-TuM4 Control of Defect Concentrations in Silicon through Surface Chemistry R. Vaidyanathan, K. Dev, R.D. Braatz, E.G. Seebauer, University of Illinois at Urbana-Champaign |
| 9:40am | EM1-TuM5 The Role of Etching in Film Growth during Wet Chemical Oxidation of H:Si(100) K.T. Queeney, J.W. Clemens, S.K. Green, C.A. Shea, Smith College |
| 10:00am | EM1-TuM6 Experimental and Theoretical Studies of Various Oxides on the Ge(100)-2x1/4x2 Surface: Deposition of SiO and Oxidation by O@sub 2@ and NO T.J. Grassman, A.C. Kummel, University of California, San Diego |
| 10:20am | EM1-TuM7 Optimized Chemical Cleaning Method for Producing Device Quality Ge(100) Surfaces S. Sun, Stanford University, Y. Sun, Z. Liu, D. Lee, S. Peterson, P. Pianetta, Stanford Synchrotron Radiation Laboratory |
| 10:40am | EM1-TuM8 XPS Study of Se-passivated Si(100) F.S. Aguirre-Tostado, R.M. Wallace, University of Texas at Dallas, J. Zhu, G. Larrieu, E. Maldonado, W.P. Kirk, M. Tao, University of Texas at Arlington |
| 11:00am | EM1-TuM9 Invited Paper Surface Passivation of Semiconductors D.R.T. Zahn, Chemnitz University of Technology, Germany |