AVS 52nd International Symposium
    Electronic Materials and Processing Tuesday Sessions
       Session EM1-TuM

Paper EM1-TuM7
Optimized Chemical Cleaning Method for Producing Device Quality Ge(100) Surfaces

Tuesday, November 1, 2005, 10:20 am, Room 310

Session: Defects, Interfaces, and Surface Passivation in Electronic Materials
Presenter: S. Sun, Stanford University
Authors: S. Sun, Stanford University
Y. Sun, Stanford Synchrotron Radiation Laboratory
Z. Liu, Stanford Synchrotron Radiation Laboratory
D. Lee, Stanford Synchrotron Radiation Laboratory
S. Peterson, Stanford Synchrotron Radiation Laboratory
P. Pianetta, Stanford Synchrotron Radiation Laboratory
Correspondent: Click to Email
Ge(100) surfaces treated by aqueous HF solutions with three different concentration (1:2, 1:5, and 1:25) have been systematically studied by synchrotron radiation photoemission spectroscopy (SR-PES) at Stanford Synchrotron Radiation Laboratory (SSRL). After HF treatment, the sample surface is hydrophobic and hydrogen terminated. HF solutions with higher concentration leave the Ge surfaces with less oxide, but relatively larger roughness. Hydrogen coverage also depends on the HF concentration. HF:H@sub 2@O (1:5) is a good choice, since it leads to a Ge(100) surface with approximately 0.9 monolayer hydrogen and less than 0.1 monolayer carbon and oxygen. The residual carbon and oxide come from the aqueous solutions. Solutions with higher concentrations of HF do not improve the surface cleanness. Additionally, a 10% HCl solution was also used to clean the Ge(100) surface. A hydrophilic and Cl terminated surface is achieved after HCl treatment. Relatively more residual carbon and oxide are left on the surface, which is due to the hydrophilic nature of treated surface. More details of the work will be discussed in the oral presentation.