| AVS 52nd International Symposium | |
| Electronic Materials and Processing | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | EM-MoM1 Invited Paper Electronic Properties of High-K Dielectrics and their Interfaces J. Robertson, University of Cambridge, UK |
| 9:00am | EM-MoM3 The Effect of Nitrogen Incorporation on the Material and Electrical Properties of HfO@sub 2@ on Si M. Sawkar, J. Choi, R. Puthenkovilakam, J.P. Chang, UCLA |
| 9:20am | EM-MoM4 Suppression of Fixed Charge at Internal Interfaces between SiO@sub 2@ and Dual-Layer High-k Gate Dielectrics: HfO@sub 2@-Al@sub 2@O@sub 3@ C.L. Hinkle, G. Lucovsky, North Carolina State University |
| 9:40am | EM-MoM5 Self-organization of Thin Film Dielectrics and Their Interfaces in Gate Stacks for Advanced Si Devices G. Lucovsky, NC State University, J.C. Phillips, Rutgers University |
| 10:00am | EM-MoM6 Physical and Electrical Properties of LaAlO@sub 3@, Potential Candidate for High K Gate Dielectric V. Edon, M.C. Hugon, O. Voldoire, B. Agius, Universite Paris Sud, France, I.J.R. Baumvol, L. Miotti, K.P. Bastos, Universidade Federal do Rio Grande do Sul, Brazil |
| 10:20am | EM-MoM7 Magnesium Oxide as a High-K Gate Dielectric L. Yan, C.M. Lopez, E.A. Irene, University of North Carolina-Chapel Hill |
| 10:40am | EM-MoM8 Spectroscopic Studies of Band Alignment in Metal/High-k Dielectric/Si Gate Stacks E. Bersch, S. Rangan, O. Celik, W. Jiang, C.L. Hsueh, E. Garfunkel, R.A. Bartynski, Rutgers University |
| 11:00am | EM-MoM9 Characterization of Nitrided Hafnium Silicates for High-@kappa@ Dielectrics Using Photoelectron Spectroscopy A. Mathew, K. Demirkan, University of Delaware, C.-G. Wang, G. Wilk, ASM America, R.L. Opila, University of Delaware |
| 11:20am | EM-MoM10 Surface Functionalization and Interface Characterization for HfO@sub 2@ Growth by Atomic Layer Deposition Y. Wang, M.-T. Ho, L.S. Wielunski, L.V. Goncharova, T. Gustafsson, Y.J. Chabal, Rutgers University, N. Moumen, Sematech, M.P. Boleslawski, Aldrich Chemical Co. |
| 11:40am | EM-MoM11 Differences in Band Edge Electronic Structure between Nanocrystalline ZrO@sub 2@ and HfO@sub 2@ Thin Films, and Bulk Crystals and Thin Films of Cubic Zironia (ZrO@sub 2@-Y@sub 2@O@sub 3@) and Hafnia (HfO@sub 2@-Y@sub 2@O@sub 3@) N.A. Stoute, H. Seo, C.C. Fulton, D.E. Aspnes, G. Lucovsky, North Carolina State University |