AVS 52nd International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuA

Paper TF-TuA3
Ru ALD and Applications for Advanced Devices

Tuesday, November 1, 2005, 2:40 pm, Room 306

Session: Atomic Layer Deposition - Metals
Presenter: H. Lee, POSTECH, South Korea
Authors: H. Lee, POSTECH, South Korea
S.J. Lim, POSTECH, South Korea
W.J. Maeng, POSTECH, South Korea
H. Kim, POSTECH, South Korea
Correspondent: Click to Email
Ru has good properties such as low resistivity, high thermal stability, and nobility. Thus, the atomic layer deposition (ALD) of Ru has been required for many applications in nanoscale device fabrication including memory capacitor electrode, Cu electroplating seed layer, and CMOS gate electrode with the scaling of devices. Although ALD of Ru has been reported by several groups previously, there are still crucial problems to be solved including the poor nucleation and practical limitation caused by the use of oxidant as a reactant. To address these problems, we have performed comparative studies using different Ru precursors including cyclopentadiel, pentadienyl, and carbonyl based precursors on various practically important substrates including Si, SiO@sub 2@, Ta@sub 2@O@sub 5@, TaN, and TiN. Also, plasma enhanced ALD using hydrogen and nitrogen plasma has been performed. Very low resistivity (as low as 10µ@ohm@cm) Ru with excellent conformality was obtained and the in situ plasma treatment produced promising results to enhance nucleation behavior. The microstructure of Ru layer as well as interface between Ru and substrates and chemical and electrical properties have been characterized. The results will be discussed focusing on the future semiconductor device applications including electrode and Cu electroplating seed layer.