Atomic later deposition (ALD) can deposit pure thin films with precisely-controlled, uniform thickness and composition over large areas and on aggressive topologies. ALD is a vapor deposition process based on sequential self terminating surface reactions where the precursor vapors are injected separately in pulses added to a flowing carrier gas, separated by a purge of excess precursor vapor. Each pulse and purge sequence constitutes an ALD half-cycle. Ideally, each half-cycle adds a uniform new layer of material and then the reaction stops even if more precursor vapor arrives at the surface. This self-terminating character results in ALD’s uniformity, conformality and precise thickness control. To achieve ALD’s unique characteristics, ALD precursors must have very specific properties: high reactivity with surfaces (but not with themselves), high thermal stability, along with adequate volatility. In addition, their reaction byproducts must not react with the deposited films. Precursors with metal-nitrogen bonds have been found to be particularly effective for ALD of metal oxides, nitrides, silicates, phosphates and pure metals: dialkylamides of Al, Sn, Ti, Zr, Hf, Nb and Ta; dialkylamide-alkylimide mixed ligand compounds of Nb, Ta, Mo and W; dialkylacetamidinates of Mg, Ca, Sc, Ti, V, Cr, Mn, Fe, Ru, Co, Ni, Cu, Bi, Y, La and the other lanthanide metals. Examples of the materials made from these precursors include high-k dielectric insulators HfO@sub 2@, HfON, HfSiON and LaAlO@sub 3@; electrical conductors of Cu; conducting Cu diffusion barriers of WN and TaN@sub x@; metals Co and Ru that promote strong adhesion between Cu and nitride diffusion barriers; magnetic metals Fe, Co and Ni and their magnetoresistive combinations with Al@sub 2@O@sub 3@ or MgO; photonic crystals of high-dielectric constant material Ta@sub 3@N@sub 5@; insulating AlN for passivating Ge surfaces; conformal silica layers for insulation in microelectronics, and for optical interference filters and nano-optical devices.