AVS 52nd International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP7
SiN Single Passivation Layer Grown by Linear Antenna Type Inductively-Coupled-Plasma Chemical Vapor Deposition for Top-Emitting Organic Light Emitting Diodes

Monday, October 31, 2005, 5:00 pm, Room Exhibit Hall C&D

Session: Aspects of Thin Films Poster Session
Presenter: H.-K. Kim, Samsung SDI
Authors: H.-K. Kim, Samsung SDI
M.S. Kim, Samsung SDI
K.-S. Lee, Samsung SDI
S.H. Jeong, Samsung SDI
K. Kim, Samsung SDI
Correspondent: Click to Email
Thin film single passivation layers (SiH@sub x@:H) for top-emitting organic light emitting diodes (TOLEDs) were deposited at substrate temperature of 40°C by using linear antenna type inductively-coupled-plasma chemical vapor deposition (ICP-CVD). It was found that the deposition rates were mainly determined by SiH@sub 4@ flow ratio at low temperature. Even at the low substrate temperature of 40°C, SiN@sub x@:H films showed a good moisture resistance and transparency of 10@super -5@g/m@super 2@/day and 92% respectively. In addition, current-voltage results showed that the SiN@sub x@:H deposition process produced negligible plasma damage, which was generally observed by plasma-related deposition processes.