AVS 52nd International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP49
Optical Constants of (CdTe)@sub 1-x@Al@sub x@x Thin Films

Monday, October 31, 2005, 5:00 pm, Room Exhibit Hall C&D

Session: Aspects of Thin Films Poster Session
Presenter: A. Mendoza-Galvan, Cinvestav-IPN, Mexico
Authors: J. Jimenez Montecinos, UAM-Azc., Mexico
A. Mendoza-Galvan, Cinvestav-IPN, Mexico
M. Zapata-Torres, CICATA-IPN, Mexico
S. Jimenez-Sandoval, Cinvestav-IPN, Mexico
M. Melendez-Lira, Cinvestav-IPN, Mexico
Correspondent: Click to Email
We have prepared (CdTe)@sub 1-x@Al@sub x@ thin films by R.F. co-sputering in order to evaluate their capability as a photovoltaic material. CdTe and Al were employed as targets. Samples were deposited on commercial glass substrates at substrate temperature of 400 °C. The aluminum content was controlled through the R.F. power intensity applied on the aluminum target. Samples were characterized by X-ray diffraction and EDX. Surface morphology, monitored by atomic force microscopy, showed a dependence with preparation details. A blue band gap shift is clearly observed by absorption spectroscopy as function of aluminum content of the films. Raman spectroscopy present a FHMW increase and small shift toward high wavenumbers in the LO CdTe-like mode. From ellipsometry measurements we obtained the pseudo dielectric function obtaining information about the critical points. Ellipsometry results also shown the shift in critical point energies as function of aluminum content. @FootnoteText@ @footnote 1@ Work partially funded by CONACyT-Mexico.