AVS 52nd International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP42
Optical and Electrical Properties of Sc-doped ZnO Thin Films Prepared by RF Magnetron Sputtering

Monday, October 31, 2005, 5:00 pm, Room Exhibit Hall C&D

Session: Aspects of Thin Films Poster Session
Presenter: M.H. Shiao, National Applied Research Laboratories, Taiwan
Authors: M.H. Shiao, National Applied Research Laboratories, Taiwan
C.C. Jaing, Ming Hsin University of Science & Technology, Taiwan
Y.J. Huang, Ming Hsin University of Science & Technology, Taiwan
H.C. Pan, National Applied Research Laboratories, Taiwan
C.Y. Su, National Applied Research Laboratories, Taiwan
C.N. Hsiao, National Applied Research Laboratories, Taiwan
K.N. Lee, National Applied Research Laboratories, Taiwan
Correspondent: Click to Email
Scandium-doped zinc (ZnO:Sc) oxide thin films were prepared on Corning 1737 glass by r.f. co-sputtering of ZnO and Sc@sub 2@O@sub 3@ targets at various deposition temperatures ranging from room temperature (RT) to 300°C and different oxygen partial pressures. Composition of the ZnO:Sc thin films was analyzed by energy dispersive X-ray spectroscopy (EDS), and the crystalline structure was examined by X-ray diffraction (XRD). Optical transmittance of the films was measured by a Perkin Elmer Lambda 900 spectrometer. Electrical resistivity, Hall mobility and carrier concentration were investigated by a Hall effect measuring system. Surface morphologies and corresponding electrical properties of ZnO:Sc thin films were observed by adopting a conducting atomic force microscope (CAFM). From experimental results, the deposited thin films showed good conductivity (@>=@ 10@super 2@ @ohm@@super -1@cm@super -1@) and high optical transmittance (@>=@ 85%) in the wavelength range of 400-800 nm. The resistivity of ZnO:Sc thin films increased and the preferred orientation was changed from (002) to (103) as the oxygen partial pressure increased.