AVS 52nd International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP41
The Effect of Ion-beam Assisted Deposition on the Electrical Properties of Indium Zinc Oxide Thin Films Investigated by Conducting Atomic Force Microscopy

Monday, October 31, 2005, 5:00 pm, Room Exhibit Hall C&D

Session: Aspects of Thin Films Poster Session
Presenter: C.Y. Su, National Applied Research Laboratories, Taiwan
Authors: C.Y. Su, National Applied Research Laboratories, Taiwan
H.C. Pan, National Applied Research Laboratories
M.H. Shiao, National Applied Research Laboratories, Taiwan
C.N. Hsiao, National Applied Research Laboratories, Taiwan
K.N. Lee, National Applied Research Laboratories, Taiwan
Correspondent: Click to Email
Indium zinc oxide (IZO) thin films with 5 wt.% and 10 wt.% of zinc oxide were prepared as the anode layer for organic light emitting diodes (OLEDs). The film deposition process gave a significant influence on device characteristics, and considerable improvements due to the energetic ion bombardments during ion-beam assisted deposition (IAD) were obtained. These improvements are even over the conventional vacuum deposition results. The conducting atomic force microscope (CAFM) that was self-established from a commercial atomic force microscope at ITRC (Instrument Technology Research Center) was employed to investigate the surface morphologies and corresponding electrical properties. And the experiment results suggest that the IAD has the possibility of controlling two factors: the growth morphology and surface electrical properties of the IZO thin films. Including lower roughness (Rms changed from 2.15 nm to 1.50 nm) and higher conductivity (>10@super 3@ @ohm@@super -1@cm@super -1@). The IAD gave uniform surface coverage, which means the initial film growth topography consist of well-distributed small grains other than coagulated islands. The current images that were simultaneously scanned and captured with the topographic images indicate improvement of surface electrical properties from the nano-scale surface inspection of the IZO thin films. The basic principles and mechanisms of this CAFM system are also described.