AVS 52nd International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP37
Synthesis and Characterization of SiN@sub x@ Films Deposited on Silicon by Reactive RF Sputtering@super *@

Monday, October 31, 2005, 5:00 pm, Room Exhibit Hall C&D

Session: Aspects of Thin Films Poster Session
Presenter: C. Mendoza-Barrera, UPIITA-IPN, México
Authors: C. Mendoza-Barrera, UPIITA-IPN, México
E. Valaguez, UPIITA-IPN, México
A. Garcia-Sotelo, Cinvestav-IPN, México
V. Altuzar, Cinvestav-IPN, México
M. Melendez-Lira, Cinvestav-IPN, México
A. Mendoza-Galván, Cinvestav-IPN, México
S. Jiménez-Sandoval, Cinvestav-IPN, México
Correspondent: Click to Email
Silicon nitride SiN@sub x@ is a widely used compound in the area of sensors because its electric an optoelectronic properties when it is grew at temperatures lower than 400°C. Also it is employed as buffer layer to deposit films of metallic nanoparticles which are employed as seed for nanotubes grown. We report details of the deposition of SiN@sub x@ thin films by reactive R.F. sputtering on silicon along with results of their structural and optical characterization. The effect of substrate temperature and power intensity of the radiofrequency on films properties were evaluated. Radiofrequency power intensities between 100 and 300 W and substrate temperatures between 100 and 300 °C were studied. Structural and optical characterization were carried out by X-ray diffraction, energy dispersive of X-ray spectroscopy, atomic force microscopy and UV-Vis, Raman and ellipsometry spectroscopies. As expected results indicated that SiNx was produced with optical and structural properties depending on growth parameters. Results are discussed taking in account the stoichiometry obtained under the different growth conditions and the possibility of a porous structure of SiN@sub x@. @FootnoteText@ *Work partially funded by CONACyT-Mexico.