This study correlated sputtering targets and deposited film properties in physical vapor deposition (PVD). When the sputtering targets consist of multiple elements, in addition to sputtering parameters, distribution of the individual elements or the constitutional target structure will affect the deposited film properties. In this report, we investigated the influences of target structures, including inter-diffusion between W and Ti in W-10 wt% Ti, precipitate size of Si in Al-1 wt% Si and distribution of Al10Mo inter-metallic phase in Al-2 at% Mo, on the deposited film properties. The results indicated that the greater extent of inter-diffusion between W and Ti of the W-10 wt% Ti target, the higher the compressive stress of the deposited film. The larger the Si precipitates in the Al-1 wt% Si target, the larger the Si precipitates in the deposited film. The larger the Al10Mo inter-metallic phases in the Al- 2 at% Mo, the less but larger whiskers generated on the annealed films. These evidences suggest that, although the films are formed by re-arrangement of the bombarded atoms from the sputtered target, mirror effect from target to film exists via PVD.