AVS 52nd International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP34
Electron Beam Induced Processing of Nanoscale Features: Process Parameters, Simulated Growth, and Nanoscale Applications

Monday, October 31, 2005, 5:00 pm, Room Exhibit Hall C&D

Session: Aspects of Thin Films Poster Session
Presenter: P.D. Rack, University of Tennessee
Authors: P.D. Rack, University of Tennessee
J.D. Fowlkes, University of Tennessee
S.J. Randolph, University of Tennessee
Correspondent: Click to Email
The rapid and precise direct write growth of nanoscale features by electron beam induced deposition (EBID) requires the optimization of growth velocity while maintaining nanoscale feature dimensions. There is a vast and complex EBID parameter space includes the precursor gas pressure, the primary electron beam energy, the electron beam current, surface diffusion rates of adsorbed precursor species, thermal effects on desorption, and the cascade of electron species produced by inelastic scattering processes. These variables affect the probability of precursor dissociation and hence determine the feature growth velocity and the size of the structure through a series of complex, coupled nonlinear interactions. A dynamic computer simulation based on Monte Carlo calculation sequences was created to aide in the interpretation of experimental observations by simulating experimental growth conditions. In this presentation, we will describe the parameter space and illustrate some of the complex interactions and introduce a Monte Carlo growth simulation. Experimental observations will be correlated to the simulated results. Finally, several nanoscale devices grown with electron beam induced processing will be demonstrated.