AVS 52nd International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP31
Palladium Oxide Composite Films Containing Palladium Metal Phase Fabricated by Reactive Ion Beam Sputter-Deposition

Monday, October 31, 2005, 5:00 pm, Room Exhibit Hall C&D

Session: Aspects of Thin Films Poster Session
Presenter: T. Ichinohe, Tokyo National College of Technology, Japan
Authors: T. Ichinohe, Tokyo National College of Technology, Japan
S. Masaki, Tokyo National College of Technology, Japan
K. Kawasaki, TDY Co., Ltd., Japan
Correspondent: Click to Email
Palladium oxide (PdO) is known to be p-type semiconductor with 1.5-2.2 eV band gap, and generally formed by thermal oxidation over 400@super o@C. This study reports the relation between formation of PdO and the parameters of reactive ion beam sputter-deposition, such as various substrate temperatures, deposition rates, and oxygen flow rates. According to X-ray diffraction (XRD) study, PdO(002) mixed with Pd(100) was formed in the films at low substrate temperature (T@sub sub@). When T@sub sub@ was 200@super o@C, the XRD intensity of PdO(002) seemed to become higher than Pd(100), in other words, it was tended to show the ratio of their peak intensities (I@sub PdO@/I@sub Pd@) higher than 1 indicating that the formation of PdO was relatively dominant than that of Pd at T@sub sub@=200@super o@C. The intensity of PdO(002) decreased or sometime disappeared when the films were formed at T@sub sub@=400@super o@C. The optimal parameters of reactive ion beam sputter-deposition can lead to form palladium oxide films at low temperature.