AVS 52nd International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP24
Characteristics of Indium Zinc Oxide Top Cathode Layer Prepared by Box Cathode Sputtering for Top-Emitting Organic Light-Emitting Diodes

Monday, October 31, 2005, 5:00 pm, Room Exhibit Hall C&D

Session: Aspects of Thin Films Poster Session
Presenter: D.-G. Kim, Samsung SDI
Authors: H.-K. Kim, Samsung SDI
D.-G. Kim, Samsung SDI
K.-S. Lee, Samsung SDI
Correspondent: Click to Email
We report on plasma damage-free deposition of indium zinc oxide (IZO) cathode layers for top-emitting organic light-emitting diodes (TOLEDs) by using a box cathode sputtering (BCS) technique. A sheet resistance of 42.6W/£ and average transmittance above 88% in visible range were obtained even in IZO layers deposited by the BCS at room temperature. The TOLED with IZO top cathode layer grown by the BCS shows electrical characteristics comparable to TOLED with only thermally evaporated Mg-Ag cathode. In particular, it is shown that the TOLED with the IZO top cathode layer deposited by the BCS has very low leakage current density of 1X10@super -5@mA/cm@super 2@ at reverse bias of -6V. This suggested that there is no plasma damage caused by the bombardment of energetic particles during IZO sputtering process. Based on current-voltage, x-ray diffraction (XRD), high-resolution electron microscopy (HREM), scanning electron microscopy (SEM), and atomic force microscopy (AFM) examination results, possible mechanisms to explain plasma damage-free sputtering of the BCS system are suggested.