AVS 52nd International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP23
Improvement of Surface Roughness in Indium Tin Oxide (ITO) Anode for Organic Light-Emitting Diode (OLED) by Water Vapor Injected Radio Frequency Sputtering

Monday, October 31, 2005, 5:00 pm, Room Exhibit Hall C&D

Session: Aspects of Thin Films Poster Session
Presenter: K.-S. Lee, Samsung SDI
Authors: K.-S. Lee, Samsung SDI
D.-G. Kim, Samsung SDI
H.-K. Kim, Samsung SDI
Correspondent: Click to Email
We report on improvement of surface roughness in indium tin oxide (ITO) anode which was grown by water vapor injected rf sputtering method, for use in organic light-emitting diode (OLEDs). It is shown that ITO films prepared by water vapor injected rf sputtering have very smooth surface (Rms 20.Å, PtV 174Å), low resistivity (0.00019 Ω/square), and high transmittance (~ 96%). Scanning electron microscopy (SEM), atomic force microscopy (AFM), and x-ray diffraction (XRD) examination results show that film surfaces of ITO were mainly influenced by the preferred orientations in ITO anode films. In addition, secondary ion mass spectroscopy (SIMS) result clearly shows that OH content in ITO film was increased by water vapor injection. OLED with ITO cathode prepared by water vapor rf sputter method show lower turn on voltage as compared to that of OLED with ITO films prepared by rf sputtering without water vapor. Based on SEM, AFM, and XRD results, we describe a possible mechanism to explain improved electrical and surface properties of ITO films prepared by water vapor injected rf sputtering.