AVS 52nd International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP18
Electrical, Optical and Structural Properties of Arsenic-doped (Zn,Mg)O Films

Monday, October 31, 2005, 5:00 pm, Room Exhibit Hall C&D

Session: Aspects of Thin Films Poster Session
Presenter: J.-M. Erie, University of Florida
Authors: J.-M. Erie, University of Florida
Y.J. Li, University of Florida
H. Kim, University of Florida
K Ip, University of Florida
S.J. Pearton, University of Florida
V. Cracium, University of Florida
D.P. Norton, University of Florida
J. Chen, University of Florida
F. Ren, University of Florida
I. Kravchenko, University of Florida
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Zinc oxide is an attractive compound semiconductor for transparent electronics, UV light emitting diodes (LEDs) and laser diodes (LDs). It possesses a direct band gap of 3.37eV, a large exciton binding energy of 60 meV and a high theoretical saturation velocity. However, the formation of p-type material with a high hole carrier density remains a major challenge. Recent efforts have focused on ZnO p-type doping with group V anions, namely N, P or As. In this work, the synthesis and properties of As-doped (Zn,Mg)O thin films grown by pulsed laser deposition are reported. Epitaxial (Zn,Mg)O films doped with 0.02-0.2 at % As are grown using a single ablation target synthesized with high-purity zinc arsenide as the source of arsenic. The structure and phase formation are characterized as a function of growth temperature and oxidation conditions. Both oxygen and ozone are explored as oxygen source gases. Film properties are characterized using Hall measurement, photoluminescence, scanning electron microscope, and X-ray diffraction. This work was supported by the National Science Foundation, Air Force Office of Scientific Research, the Department of Energy, and the Army Research Office. The authors would also like to acknowledge the Major Analytical Instrumentation Center, Dept. of Materials Science and Engineering, University of Florida.