AVS 52nd International Symposium
    Thin Films Monday Sessions
       Session TF-MoP

Paper TF-MoP12
XPS Characterization of Electrochemical Growth of Conducting Polymer on Oxidized Si Surface

Monday, October 31, 2005, 5:00 pm, Room Exhibit Hall C&D

Session: Aspects of Thin Films Poster Session
Presenter: S. Takemura, Kanto Gakuin University, Japan
Authors: H. Kato, Kanto Gakuin University, Japan
S. Takemura, Kanto Gakuin University, Japan
N. Takakuwa, Kanto Gakuin University, Japan
K. Ninomiya, Kanto Gakuin University, Japan
T. Watanabe, Kanto Gakuin University, Japan
N. Nanba, Kanto Gakuin University, Japan
T. Hiramatsu, Kanto Gakuin University, Japan
Correspondent: Click to Email
Electrochemical growth of conducting polymer polythiophene (PT) film on oxidized Si wafer was closely investigated by XPS. Initial stage of polymer growth was investigated by analyzing the core-level energies and spectral profiles of the atomic components. Oxidized Si surface was also closely characterized by XPS by using curve-fitting of Si 2p and Si 2s core-level spectra to determine precisely the Si covalent states of surface layers. The purpose of the present work is to clarify the interface between an organic upperlayer and oxidized Si sublayer which is an interesting issue from practical point of view in wet fabrication techniques. The XPS spectrum of Si 2p and Si 2s of the oxidized substrate surface was composed by 5 peaks which correspond with Si valence values, such as Si, Si+, Si2+, Si3+, SiO2. The core-level energy positions of those different states were determined by XPS. The Si wafer was prepared through several stages of cleaning process. The surface roughness was reduced and the STM image of nano-scale orederd surface was obtained although the surface layers were oxidized investigated by FTIR RAS and XPS measurements. Electrochemical PT growth at initial stage was implemented on the oxidized Si substrate. Obtained XPS spectra of Si 2p and 2s showed that the Si+ peak grew associated with polymer deposition. This experimental fact reflects the interface linkage between organic polymer chain and Si oxidized layer. The bonding between organic and inorganic species will be also discussed. The present work supported by "High-Tech Research Center"Project aided by MEXT.