AVS 52nd International Symposium
    Thin Films Monday Sessions
       Session TF+NS-MoA

Invited Paper TF+NS-MoA7
Focused Electron and Ion Beam Processing and Fabrication

Monday, October 31, 2005, 4:00 pm, Room 306

Session: Focused Beam Processing & Fabrication
Presenter: J. Melngailis, University of Maryland
Authors: J. Melngailis, University of Maryland
I. Utke, EMPA, Thun, Switzerland
P. Hoffmann, EPFL, Lausanne, Switzerland
Correspondent: Click to Email
Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. Since the beams can be used to directly alter material, they represent direct nanofabrication tools. We will focus here on direct fabrication rather than lithography which is indirect in that it uses the intermediary of resist. In the case of both ions and electrons material addition or removal can be achieved using precursor gases. In addition ions can also alter material by sputtering (milling), by damage, or by implantation. Many material removal and deposition processes employing precursor gases have been developed for numerous practical applications, such as mask repair, circuit restructuring and repair, and sample sectioning. In many cases the minimum dimensions at which these processes can be realized are considerably larger than the beam diameters. The detailed atomic level mechanisms responsible for the precursor gas activation have not been studied in detail in most cases. We will review the state of the art and level of understanding of direct ion and electron beam fabrication and point out some of the unsolved problems. We will present recent results on beam deposited contacts to carbon nanotubes, nanowires and nanofibers.