AVS 52nd International Symposium
    Thin Films Monday Sessions
       Session TF+NS-MoA

Paper TF+NS-MoA5
Maskless, Direct-Write Nanolithography using Electron Beam-Induced Deposition

Monday, October 31, 2005, 3:20 pm, Room 306

Session: Focused Beam Processing & Fabrication
Presenter: S.J. Randolph, University of Tennessee, Knoxville
Authors: S.J. Randolph, University of Tennessee, Knoxville
J.D. Fowlkes, University of Tennessee, Knoxville
P.D. Rack, University of Tennessee, Knoxville
Correspondent: Click to Email
Several groups have investigated electron beam-induced deposition (EBID) as a nanoscale direct-write fabrication technique. The EBID process is similar to focused ion beam processing; however deleterious damage associated with ion implantation is mitigated when using an electron beam. Our group has been investigating this technique as a tool for rapid nanoscale device prototyping as well as for device and lithography mask repair. More recently, we have investigated EBID as a technique to be coupled with a massively parallel electron beam lithography concept-the so-called Digital Electrostatic E-beam Array Lithography (DEAL) system. The goal is to develop an alternative ultra-thin resist scheme for the DEAL low energy electron beam lithography system. We have developed a single layer and bilayer resist scheme using a tetraethylorthosilicate (TEOS) and tungsten hexafluoride precursors to deposit SiO@sub x@ and tungsten resist layers. In this presentation our experimental procedure and EBID system will described and the DEAL lithography concept briefly reviewed. The fundamental EBID process will be explained, and we will describe the relevant EBID parameters that affect the single and bilayer EBID resist schemes. The effects of secondary, backscattered, and forward scattered electrons on the resolution and exposure requirements will also be explained, and dose requirements for optimum exposure as a function of beam energy will be illustrated. Pattern transfer of sub-100 nm features requires excellent control of etch selectivity and profile control. The effects of RIE parameters such as pressure, power, and chemistry as they are related to etch selectivity and profile will also be presented.