AVS 52nd International Symposium
    Surface Science Friday Sessions
       Session SS1-FrM

Paper SS1-FrM6
Ion-induced Initiation of Defects on Graphite at Hyperthermal Beam Energies

Friday, November 4, 2005, 10:00 am, Room 202

Session: Surface Modification through Etching
Presenter: T. Tzvetkov, University of Notre Dame
Authors: X. Liu, University of Notre Dame
T. Tzvetkov, University of Notre Dame
X.D. Qin, University of Notre Dame
D.C. Jacobs, University of Notre Dame
N. Mateljevic, Yale University
J.C. Tully, Yale University
Correspondent: Click to Email
Ion beams of O@super +@, O@sub 2@@super +@, and Ne@super +@ with incident energy of 5-20 eV are used to etch a Highly Oriented Pyrolytic Graphite (HOPG) surface. The study is focused on the initial stages of defect initiation when well-ordered HOPG is damaged by ion bombardment. The defects generated by the ion beam are observed with ex-situ Scanning Tunneling Microscopy (STM). The density and size of the defects are analyzed as a function of the dose, incident energy, and chemical identity of the ion. Kinetic Monte-Carlo simulations reveal that the probability of an incident ion removing a carbon atom from an intact basal plane are orders of magnitude smaller than removing a carbon atom from a site adjacent to a defect.