AVS 52nd International Symposium
    Nanometer-Scale Science and Technology Monday Sessions
       Session NS2-MoM

Paper NS2-MoM2
Optical Activation of Implanted Impurities in ZnS Nanowires

Monday, October 31, 2005, 8:40 am, Room 210

Session: Nanowires
Presenter: C. Ronning, University of Goettingen, Germany
Authors: D. Stichtenoth, University of Goettingen, Germany
D. Schwen, University of Goettingen, Germany
S. Mueller, University of Goettingen, Germany
C. Borchers, University of Goettingen, Germany
C. Ronning, University of Goettingen, Germany
Correspondent: Click to Email
Nanostructures of zinc sulfide (ZnS), a II-VI compound semiconductors with a direct band-gap of 3.66 eV in the cubic phase and 3.74 eV in the wurtzite phase, show interesting optical properties, making it a promising candidate for optoelectronic devices. Single crystalline nanobelts and -wires were synthesized in a computer-controlled process according to the VLS mechanism. We investigated the morphology, structure and composition by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and X-ray diffraction (XRD). The optical properties have been studied by temperature dependent photo- (PL) and cathodoluminescence (CL). The synthesized ZnS nanowires were implanted with nitrogen and boron as potential donor and acceptor, respectively. The implanted nanowires were investigated directly after ion implantation and showed a high quantity of defects resulting into non-luminescence material. Annealing procedures recovered the crystal structure and the optical properties, and we found varying and new PL-lines indicating the activation of the implanted impurities.