AVS 52nd International Symposium
    Nanometer-Scale Science and Technology Monday Sessions
       Session NS2-MoM

Paper NS2-MoM1
Probing Growth Defects Inside Nanowires

Monday, October 31, 2005, 8:20 am, Room 210

Session: Nanowires
Presenter: J. Eriksson, Lund University, Sweden
Authors: J. Eriksson, Lund University, Sweden
A. Mikkelsen, Lund University, Sweden
E. Lundgren, Lund University, Sweden
W. Hofer, University of Liverpool, U.K.
N. Skold, Lund University, Sweden
L. Samulesson, Lund University, Sweden
W. Seifert, Lund University, Sweden
Correspondent: Click to Email
Free-standing semiconductor nanowires are perceived as future components in nanoelectronics and photonics. In fact, applications such as for example, bio/chemical sensors, n- p- type diode logic and single nanowire lasers have already been realized in the laboratory.@footnote 1@ Because of the extremely small dimensions of a nanowire, atomic scale structural features can have a significant impact on their properties. As a result, structural methods that address all these issues are highly desirable. Recently we have demonstrated a new method to image individual atoms inside III-V semiconductor nanowires using a combination of STM and a novel embedding scheme.@footnote 2@ In this way, we are able to image areas of the nanowire with atomic resolution both along the wire, and through the face of the wire. In this contribution we present a cross-sectional STM study of the structure and the electronic properties of stacking faults inside a GaAs nanowire containing an embedded GaInAs segment. The stacking faults are created due the formation of twins as the nanowire is grown. Spectroscopy measurements performed directly on a stacking fault are compared to density functional theory calculations, and the influence of the stacking fault on the electronic properties of the wire will be discussed. @FootnoteText@@footnote 1@L. Samuelson, Mater. Today 6 (2003) 22. @footnote 2@A. Mikkelsen et al, Nature Materials. 3 (2004) 519.