AVS 52nd International Symposium
    Nanometer-Scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP8
Recent Lithography Results from the Digital E-beam Array Lithography (DEAL) Concept

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Nanometer Scale Science and Technology Poster Session
Presenter: W.L. Gardner, Oak Ridge National Laboratory
Authors: W.L. Gardner, Oak Ridge National Laboratory
L.R. Baylor, Oak Ridge National Laboratory
X. Yang, University of Tennessee
R.J. Kasica, Oak Ridge National Laboratory
D.K. Hensley, Oak Ridge National Laboratory
S.J. Randolph, University of Tennessee
R.B. Rucker, University of Tennessee
D.C. Joy, University of Tennessee
P.D. Rack, University of Tennessee
S. Islam, University of Tennessee
B. Blalock, University of Tennessee
Correspondent: Click to Email
The Digital E-beam Array Lithography (DEAL) concept is currently under development at Oak Ridge National Laboratory (ORNL). This concept incorporates a digitally addressable field emission array built into a logic and control integrated circuit to function as the write head for a massively parallel e-beam lithography tool. Each field emission device comprises three electrodes separated 1 µm from each other by SiO2. The first electrode functions as the cathode and contains a single vertically aligned carbon nanofiber as the field emitter. The second is an extraction aperture and the third is an aperture functioning as an electrostatic focusing lens. Field emission and focusing tests on prototype devices demonstrated that the emission follows Fowler-Nordheim characteristics, the beams can be focused as anticipated from numerical simulations, and the extraction and focus apertures in well-aligned devices collect less than 1% of the emitter current. Preliminary lithographic results on PMMA coated substrates demonstrated that variations in linewidth measured as a function of the focus lens voltage are in agreement with device modeling. Recently, we obtained the capability to fabricate thick electrodes, which, based on model results, should provide better focusing and depth of field. Furthermore, progress has been made to obtain better aperture alignment and fabricate individually addressable cathodes. Our research objective is to demonstrate lithography using a full 3x3 array of operating devices. We will discuss our recent results in detail as well as ongoing work to achieve <100-nm linewidths and full array implementation.