AVS 52nd International Symposium
    Nanometer-Scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP37
Orientation Controlled Growth of Epitaxial SiNWs Networks in Ar Ambient

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Nanometer Scale Science and Technology Poster Session
Presenter: H.W. Wu, National Tsing Hua University, Taiwan, ROC
Authors: H.W. Wu, National Tsing Hua University, Taiwan, ROC
H.C. Chen, National Tsing Hua University, Taiwan, ROC
L.J. Chen, National Tsing Hua University, Taiwan, ROC
C.J. Tsai, National Tsing Hua University, Taiwan, ROC
Correspondent: Click to Email
Epitaxial silicon nanowire networks have been synthesized with a convenient annealing process in Ar ambient. Au nanoparticles were used as catalysts for nanowire synthesis via the vapor-liquid-solid growth mechanism. From the SEM observation, silicon nanowires form rectangular networks on (100) Si, and parallel straight lines on (111) Si. The diameters of silicon nanowires are between 10 and 60 nm. Structural characterization showed that the silicon nanowires grow primarily along the <110> directions. The heights of silicon nanowires are between 3 and 20 nm. For applications in nanotechnology, growing silicon nanowires epitaxially on a suitable substrate promises to realize a high density of integrated devices based on nanowires.