AVS 52nd International Symposium
    Nanometer-Scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP35
Formation of Ordered Nanodots with Si-Ge Superlattices by One Step Etching Process

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Nanometer Scale Science and Technology Poster Session
Presenter: H.C. Chen, National Tsing Hua University, Taiwan, Republic of China
Authors: H.C. Chen, National Tsing Hua University, Taiwan, Republic of China
S.W. Lee, National Tsing Hua University, Taiwan, Republic of China
L.J. Chen, National Tsing Hua University, Taiwan, Republic of China
Correspondent: Click to Email
Semiconductor superlattices are attracting increasing attention due to their potential applications in thermoelectric and optoelectronic devices. While the 2-dimensional (2D) semiconductor possesses promising properties for optoelectronic devices such as light emitting diode, heterostructure formation in zero-dimension (0D) nanostructure may provide even more attractive characteristics and improve device performance. By the use of comparably low etching-rate and size uniformity of Ge QDs, a method was developed to fabricate nanodots with excellent uniformity over large area, containing Si-Ge superlattices structure. The density of the nanodots is about 1*10@super 10@ /cm@super 2@, equivalent to that of original Ge QDs. Pyramid-like nanodots containing Si-Ge superlattices with 35 nm in height and 80 nm in diameter have been successfully fabricated. The use of Ge QDs/Si-Ge superlattices heterostructure takes advantages of not only Ge QDs with good size uniformity and low etching-rate to obtain nanodots with Si-Ge superlattices structure, but also compatible with the Si/SiGe-based integration technology.