AVS 52nd International Symposium
    Nanometer-Scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP32
The Dependence of Photoluminescence Characteristics of In2O3 Nanowires on the Zn Doping Level

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Nanometer Scale Science and Technology Poster Session
Presenter: C.L. Hsin, National Tsing Hua University, Taiwan, R.O.C.
Authors: C.L. Hsin, National Tsing Hua University, Taiwan, R.O.C.
J.H. He, National Tsing Hua University, Taiwan, R.O.C.
L.J. Chen, National Tsing Hua University, Taiwan, R.O.C.
Correspondent: Click to Email
Nano-scaled materials have attracted increasing attention because of their novelty and potential applications. In this paper, we report the growth of In2O3 nanowires with different zinc doping levels in the vacuum furnace by a vapor transport and condensation method. The photoluminescence properties were measured and discussed Self-assembled indium oxide nanowires with different zinc doping levels have been synthesized on the silicon wafer in a vacuum furnace. The morphologies, structures and chemical compositions have been studied by field emission scanning electron microscopy and transmission electron microscopy. The photoluminescence properties of the samples were measured at room temperature. The presence of metal particle at the top indicates that the growth of the nanowire is by VLS mechanism. The intensity variation with the doping level of the samples can be seen clearly. The band diagram can explain the photoluminescence characteristics. The photoluminescence properties are attributed to the radiative recombination between oxygen vacancies, zinc impurities and indium-oxygen vacancy pairs.