AVS 52nd International Symposium
    Nanometer-Scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP29
Observation of Broad Strong Red Photoluminescence Band in Indium Oxy-nitride Nanoparticles

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Nanometer Scale Science and Technology Poster Session
Presenter: T.S. Ko, National Chiao Tung University, Taiwan
Authors: T.S. Ko, National Chiao Tung University, Taiwan
C.P. Chu, National Chiao Tung University, Taiwan
W.T. Hsu, National Chiao Tung University, Taiwan
H.C. Kuo, National Chiao Tung University, Taiwan
S.C. Wang, National Chiao Tung University, Taiwan
Correspondent: Click to Email
Indium oxy-nitride nanoparticles were synthesized on silicon substrate in nitrogen atmosphere using a method involving thermal evaporation of pure indium. Nanoscale compositional analysis by energy dispersion spectrum showed the existence of indium oxy-nitride compound. Scanning electron microscopy investigations showed shape transformation from amorphous sphere to well-shaped octahedron with an average nanoparticle size from 180 nm to 1 µm when growth temperature of substrate increased from 700 to 900 °C. Photoluminescence study was performed on indium oxy-nitride nanoparticle samples grown at different temperatures. It was found that all of samples grown at different temperatures exist a broad emission band centered around 690 nm with a full width at half maximum is about 250 nm, spanning the whole red region. The emission intensity increases with growth temperature, which suggests the formation of high quality indium oxy-nitride nanoparticles with increasing temperature. The photoluminescence results indicate the indium oxy-nitride nanoparticle samples have potentialities of developing into red phosphor system for lamp applications.