AVS 52nd International Symposium
    Nanometer-Scale Science and Technology Tuesday Sessions
       Session NS-TuP

Paper NS-TuP25
Synthesis and Characterization of SiC Nanowires and SiC/ZnO Hetero-Nanostructure Grown by Direct Heating Method

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Nanometer Scale Science and Technology Poster Session
Presenter: Y. Ryu, POSTECH, Korea
Authors: Y. Ryu, POSTECH, Korea
Y. Tak, POSTECH, Korea
K. Yong, POSTECH, Korea
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SiC is a suitable material for the fabrication of electronic devices operating at high power, high temperature and high frequency due to its unique physical, mechanical and electronic properties. Cubic phase SiC nanowires were synthesized in large quantity by simply heating NiO catalyzed Si substrates at the growth temperature of about 1050 @super o@C. A carbothermal reduction of WO@sub 3@/C provided reductive environment and also carbon source to synthesize crystalline SiC nanowires. SiC nanowires were 20-50 nm in diameter, and the as-grown nanowires were coated with SiO@sub 2@ sheath of ~ 20 nm thick. The grown nanowires were characterized using SEM, TEM, EDX, Raman spectroscopy, FTIR and XRD. Also, the electron field emission properties of the SiC nanowires and core-shell SiC-SiO@sub 2@ nanowires were investigated. The turn on field at the emission current density of 10 µA/cm@super 2@ was below 4 V/µm, and it showed uniform emission image. Hetero-nanostructure of ZnO nanorods(NR)/SiC nanowires(NW) were produced using a two step process: direct growth and metal-organic chemical vapor deposition (MOCVD). Atomically abrupt interface was observed at the heterojunction of ZnO NR/SiC NW. The photoluminescence (PL) of aligned ZnO nanorods will be discussed as well.