AVS 52nd International Symposium
    Nanometer-Scale Science and Technology Thursday Sessions
       Session NS-ThM

Paper NS-ThM9
Enhancement on Field Emission Performance of MWNTs Impregnated with RuO@sub 2@ and Rooted into Metal Substrate

Thursday, November 3, 2005, 11:00 am, Room 210

Session: Nanotube-based Devices
Presenter: H. Liu, The Graduate University for Advanced Studies, Japan
Authors: H. Liu, The Graduate University for Advanced Studies, Japan
T. Noguchi, KAKEN Inc., Japan
K. Tatenuma, KAKEN Inc., Japan
S. Kato, The Graduate University for Advanced Studies, Japan
Correspondent: Click to Email
We have shown that field emission characteristics of MWNTs are drastically enhanced by RuO@sub 2@ impregnation and MWNT rooting into a metal substrate. These new key technologies improve both increase of field enhancement factor due to a proper surface density of subnano and nano sized RuO@sub 2@ particles on MWNT surfaces and increase of electrical conductivity, thermal conductivity, high-temperature resistance and tensile strength due to their high adhesivity between MWNTs and the metal substrate. In this paper, we demonstrate that the electron emission current from bulky MWNTs could reach 1.2A/cm@super 2@ at 6.0V/µm and reach the maximum of 1.9A/cm@super 2@ at 7.5V/µm even in the continuous DC mode in optimization processes for the impregnation and the rooting. According to analysis of microscope images of the substrate, the results above can be corrected by a factor of 2.5 times considering that an area of 40% on the substrate was only covered with MWNTs because surface density of MWNTs on the substrate has not yet fully controlled in the process of the rooting. In the presentation, the detail of these results and discussions will be given with results of endurance running tests at the high current density.