AVS 52nd International Symposium
    Nanometer-Scale Science and Technology Thursday Sessions
       Session NS-ThM

Paper NS-ThM7
Carbon Nanotube Schottky Diodes for High Frequency Applications

Thursday, November 3, 2005, 10:20 am, Room 210

Session: Nanotube-based Devices
Presenter: E.W. Wong, Jet Propulsion Laboratory, California Institute of Technology
Authors: E.W. Wong, Jet Propulsion Laboratory, California Institute of Technology
H.M. Manohara, Jet Propulsion Laboratory, California Institute of Technology
E. Schlecht, Jet Propulsion Laboratory, California Institute of Technology
B.D. Hunt, Jet Propulsion Laboratory, California Institute of Technology
P.H. Siegel, Jet Propulsion Laboratory, California Institute of Technology
Correspondent: Click to Email
We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high frequency applications. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than -15 V. In order to decrease the series resistance, multiple SWNTs are grown in parallel in a single device, and the metallic tubes are burnt-out selectively. At low biases these diodes showed ideality factors in the range of 1.5 to 1.9. Results from devices containing multiple nanotubes suggest that these diodes can act as direct detectors at room temperature at 2.5 terahertz (THz) frequency with noise equivalent powers (NEP) potentially comparable to that of the state-of-the-art gallium arsenide sold-state Schottky diodes, in the range of 10@super -13@W/Hz@super 1/2@. In essence, the SWNT Schottky diodes with multiple parallel tubes per device with individually reduced resistances to the order of a few k@OMEGA@ promise superior performance compared to that of the state-of-the art solid-state Schottky diodes for applications at high frequencies.