AVS 52nd International Symposium
    Nanometer-Scale Science and Technology Thursday Sessions
       Session NS-ThM

Paper NS-ThM11
Optimization of Impregnation of Subnano RuO@sub 2@ Clusters on MWCNT for Field Emission Displays

Thursday, November 3, 2005, 11:40 am, Room 210

Session: Nanotube-based Devices
Presenter: T. Noguchi, KAKEN Inc., Japan
Authors: T. Noguchi, KAKEN Inc., Japan
K. Tatenuma, KAKEN Inc., Japan
S. Kato, High Energy Accelerator Research Organization (KEK), Japan
Correspondent: Click to Email
For applications of MWNTs to FEDs and the other electron sources, we reported the achievement of a remarkably high DC current density close to 300mA/cm@super 2@ with a threshold electric field of 2V/µm using a new technology of impregnation of subnano RuO@sub 2@ clusters on MWCNT surfaces and of MWNT rooting into a metal substrate. Here we focus on optimization of the impregnation for better electron emission property of MWNTs on ITO glass substrates. Preliminary investigation showed that two orders of magnitude less quantity of the impregnation was sufficient for MWNTs of high purity than MWNTs of low purity to obtain the same emission property. The quite different quantity of the impregnation for proper emission would be explainable based on possible absorption of RuO@sub 2@ particles into the impurities of MWNTs.