AVS 52nd International Symposium
    Manufacturing Science and Technology Tuesday Sessions
       Session MS-TuP

Paper MS-TuP8
Silicon Etch for Nano-photonic Structure using Hydrogen Silsesquioxane (HSQ) as a Direct Etch Mask

Tuesday, November 1, 2005, 4:00 pm, Room Exhibit Hall C&D

Session: Topics in Advanced Manufacturing Poster Session
Presenter: J.K. Kim, Inha University, Korea
Authors: J.K. Kim, Inha University, Korea
J.H. Sung, Inha University, Korea
K.J. Lim, Inha University, Korea
B.H. O, Inha University, Korea
S.G. Park, Inha University, Korea
Correspondent: Click to Email
As a typical etch process for a Si nano-structure of high aspect ratio requires a bilayer mask or a hard mask, we have investigated the use of a hydrogen silsesquioxane(HSQ) layer as a direct etch mask for Si structure. The HSQ is known as a negative tone e-beam resist good for nanosize patterning. It has attracted lots of attention in the semiconductor industry due to its low dielectric constant, easy processability, good planarization for surfaces, as well as excellent gap fill capability in deep submicron features. In our experiment, thin HSQ layer of 90 nm-thickness was tested as a direct Si etch mask for the etch of sub-micron size hole array of 280 nm in depth and 350 nm in hole-diameter. The etch selectivity of around 2.8:1 for Si to HSQ was obtained so far using SF6-based gas chemistry in our ICP system. The systematic variation of etch parameters were studied to improve the etched wall profile and surface roughness, and the optimized results will be discussed.