AVS 52nd International Symposium
    Applied Surface Science Monday Sessions
       Session AS-MoP

Paper AS-MoP9
Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy Investigations of Focused Ion Beam-Irradiated Targets

Monday, October 31, 2005, 5:00 pm, Room Exhibit Hall C&D

Session: Aspects of Applied Surface Science Poster Session
Presenter: K. Archuleta, Sandia National Laboratories
Authors: K. Archuleta, Sandia National Laboratories
J.L. Fenton, University of New Mexico
M.J. Vasile, Sandia National Laboratories
S. Campin, Sandia National Laboratories
D.P. Adams, Sandia National Laboratories
J.E. Fulghum, University of New Mexico
Correspondent: Click to Email
Focused ion beam (FIB) techniques have a wide range of applications, from lithographic mask repair and semiconductor analysis to machining of microtools. As FIB prototyping methods are extended to the nanometer scale, the effects of distributed charge resulting from ion implantation/sputtering, modifications in near-surface chemistry, and evolved surface morphology become more relevant to device fabrication and operation. Toward this end, we investigate the residual electronic and chemical properties of ion-exposed areas. High energy (30 keV) focused ion beams are used to expose 100 µm wide features in Si, SiO2 and C substrates. Samples are then removed from the FIB system, and the residual surface potential and spatial distributions of charge are analyzed using ex-situ scanning surface potential microscopy and scanning capacitance microscopy. Changes in residual surface potential are evaluated over a large range of ion dose (~1016 -1018 ions/cm2); this includes conditions that lead to target swelling (low fluence) followed by constant-rate sputter erosion (high dose). The evolving chemistry of the near-surface region is also investigated as a function of ion dose. High spatial resolution, x-ray photoelectron spectroscopy provides insight into the changes of near-surface composition that occur during increased gallium ion exposure.