AVS 52nd International Symposium
    Applied Surface Science Thursday Sessions
       Session AS+TF-ThM

Paper AS+TF-ThM8
Hot Electron Transport Across Manganese Silicide Layers on the Si(001) Surface

Thursday, November 3, 2005, 10:40 am, Room 206

Session: Thin Film Characterization
Presenter: A. Stollenwerk, University at Albany SUNY
Authors: A. Stollenwerk, University at Albany SUNY
M.R. Krause, University at Albany SUNY
V.P. LaBella, University at Albany SUNY
Correspondent: Click to Email
The need for high efficiency spin injection for spintronic applications has led to the study of different ferromagnetic interfaces. Recent theoretical studies have shown that the MnSi interface orders ferromagnetically.@footnote 1@ We performed ballistic electron emission microscopy (BEEM) on the MnSi/Si(001) Schottky barrier to study the hot electron transport properties. BEEM allows the interface to be probed on the nanometer scale and also gives the option to perform spin dependent measurements. Samples for this study were fabricated by electron beam deposition of Mn onto n-type Si(001) with thicknesses ranging from 50 to 200 Å. These layers were annealed at various temperatures in ultra high vacuum (UHV). The front side contact was fixed ex situ before the sample was reinserted into UHV to perform BEEM. Film composition has been determined by secondary ion mass spectroscopy (SIMS). The Schottky heights have been determined by fitting the BEEM spectra to the Bell-Kaiser model. The effects of temperature, film thickness and composition on the BEEM current will be discussed. @FootnoteText@ @footnote 1@S.A. Wolf et al., Science 294, 1488 (2001).