AVS 52nd International Symposium
    Applied Surface Science Thursday Sessions
       Session AS+TF-ThM

Paper AS+TF-ThM2
Characterization of Low k Dielectrics Using Auger Microprobe Analysis

Thursday, November 3, 2005, 8:40 am, Room 206

Session: Thin Film Characterization
Presenter: C. Dziobkowski, IBM Corporation, E. Fishkill
Authors: C. Dziobkowski, IBM Corporation, E. Fishkill
E.D. Adams, IBM Corporation, Essex Jct.
J.A. Coffin, IBM Corporation, Hopewell Jct.
R.E. Davis, IBM Corporation, Hopewell Jct.
P.L. Flaitz, IBM Corporation, Hopewell Jct.
E.G. Liniger, IBM Research, Yorktown Heights
S.E. Molis, IBM Corporation, Hopewell Jct.
D.D. Restaino, IBM Corporation, Hopewell Jct.
Correspondent: Click to Email
As the dimensions of integrated circuits are reduced, the capacitance between metal lines has an ever increasing impact on device performance. It increases circuit delay, results in parasitic capacitance creating crosstalk, degrades the signal to noise ratio and increases power consumption. Reduction of capacitance by employing low k dielectric materials is thought to be a solution. These low k materials have to be characterized as to their composition, uniformity, void formation and oxygen permeability requirements. This paper gives a description of the methodology developed using Auger depth profile analysis to characterize these new materials. Also important is how these Auger microprobe results can be compared to data obtained from TEM, TOF-SIMS and Rutherford backscattering analyses. The synergism of these analytical techniques is necessary to obtain the understanding needed for the integration of these low k dielectric materials with copper metallurgy in successful device fabrication.