AVS 51st International Symposium | |
Thin Films | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:20am | TF-MoM1 Invited Paper Atomic Layer Deposited Barriers for Copper Interconnects J. Schuhmacher, A. Martin, D. Ernur, Zs. Tökei, Y. Travaly, C. Bruynseraede, A. Satta, C.M. Whelan, D. Shamiryan, G. Beyer, IMEC, Belgium, T. Abell, Intel affiliate at IMEC, Belgium, V. Sutcliffe, Texas Instruments affiliate at IMEC, Belgium, M. Schaekers, K. Maex, IMEC, Belgium |
9:00am | TF-MoM3 Effects of Surface Chemistry on ALD Ta(N) Barrier Formation on Low k Dielectrics J. Liu, J. Bao, University of Texas at Austin, M. Scharnberg, Technische Fakultat der Christian-Albrechts-Universitat, Germany, P.S. Ho, University of Texas at Austin |
9:20am | TF-MoM4 Evaluation of Plasma Enhanced Atomic Layer Deposition TaN for Metal Gate Electrode Application H. Kim, IBM Thomas J. Watson Research Center, D.-G. Park, P. Ronsheim, IBM Semiconductor Research and Development Center, S.M. Rossnagel, IBM Thomas J. Watson Research Center |
9:40am | TF-MoM5 Nucleation and Electrical Characterization of Ruthenium formed by Selective Area Atomic Layer Deposition K.J. Park, J.M. Doub, G.N. Parsons, North Carolina State University |
10:00am | TF-MoM6 Invited Paper Atomic Layer Deposition for Metal Gate and Capacitor Electrodes D.-G. Park, IBM Microelectronics |
10:40am | TF-MoM8 Infrared Analysis of HfO@sub2@ ALD from Hafnium Diethyl-Amide on SiO@sub2@ and Si-H surfaces M.J. Kelly, G.N. Parsons, North Carolina State University, J.G. Han, C.B. Musgrave, Stanford University |
11:00am | TF-MoM9 Area-selective Atomic Layer Deposition for high-@kappa@ Dielectric Materials R. Chen, D.W. Porter, S.F. Bent, H.S. Kim, R. Sreenivasan, P.C. McIntyre, H. Jagannathan, Y. Nishi, Stanford University |
11:20am | TF-MoM10 SiO@sub 2@ Atomic Layer Deposition Using HSi[N(CH@sub 3@)@sub 2@]@sub 3@ and H@sub 2@O@sub 2@ B.B. Burton, University of Colorado, S.W. Kang, Pohang University of Science and Technology, Korea, S.M. George, University of Colorado |
11:40am | TF-MoM11 Radical-Enhanced Atomic Layer Deposition of Pure and Erbium-Doped Y@sub 2@O@sub 3@ Thin Films T.T. Van, J.P. Chang, University of California, Los Angeles |