AVS 51st International Symposium
    Thin Films Monday Sessions
       Session TF-MoM

Invited Paper TF-MoM1
Atomic Layer Deposited Barriers for Copper Interconnects

Monday, November 15, 2004, 8:20 am, Room 303C

Session: ALD and Applications
Presenter: J. Schuhmacher, IMEC, Belgium
Authors: J. Schuhmacher, IMEC, Belgium
A. Martin, IMEC, Belgium
D. Ernur, IMEC, Belgium
Zs. Tökei, IMEC, Belgium
Y. Travaly, IMEC, Belgium
C. Bruynseraede, IMEC, Belgium
A. Satta, IMEC, Belgium
C.M. Whelan, IMEC, Belgium
D. Shamiryan, IMEC, Belgium
G. Beyer, IMEC, Belgium
T. Abell, Intel affiliate at IMEC, Belgium
V. Sutcliffe, Texas Instruments affiliate at IMEC, Belgium
M. Schaekers, IMEC, Belgium
K. Maex, IMEC, Belgium
Correspondent: Click to Email
Development and properties of a WNC atomic layer deposited (ALD) barrier film in terms of requirements and performance for damascene BEOL process flows are discussed. Damascene type substrates comprise various surfaces. The interaction of a surface with the ALD precursors controls the growth of ALD films. The effects of the substrate are reflected by the characteristics of the transient, non-linear growth period. Examples show the importance of characterizing the nature of the substrate / ALD interaction. Surface preparation before or during the ALD process is a useful tool for improving ALD film quality. An example for the challenges set by the introduction of a new material in an existing process flow is given with the interaction of ALD WNC to the chemical mechanical planarization (CMP) process. Film reliability will be discussed on damascene test structures with ALD WNC in the range of 2 to 10 nm.