AVS 51st International Symposium
    Surface Science Monday Sessions

Session SS2-MoM
Functionalization of Semiconductor Surfaces

Monday, November 15, 2004, 8:20 am, Room 210C
Moderator: J.N. Russell, Jr., Naval Research Laboratory


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am SS2-MoM1
Atomic-level Control of Chemical Properties of Si(100) with Dopant Impurities
Y. Wang, G.S. Hwang, The University of Texas at Austin
8:40am SS2-MoM2
Chemistry on Surfaces of Thin Films and at Thin Film/Silicon Buried Interface: Vinyltrimethylsilane and (hfac)Cu(VTMS) on Si(100)-2x1 and on TiCN/Si(100)
A.V. Teplyakov, L. Pirolli, University of Delaware
9:00am SS2-MoM3 Invited Paper
Functionalization of Semiconductor Surfaces
M.A. Filler, D.W. Porter, Stanford University, A. Kim, KAIST, Korea, J.A. Van Deventer, S.F. Bent, Stanford University
9:40am SS2-MoM5
Adsorption of Amines on Germanium and Silicon Surfaces
P. Prayongpan, C.M. Greenlief, University of Missouri-Columbia
10:00am SS2-MoM6
Silicon Surface Chemistry of Substituted Triazines
S.M. Casey, L.M. LeMond, University of Nevada, Reno
10:20am SS2-MoM7
Carbonyl Chemistry at the (100)-2x1 Semiconductor Interface
M.A. Filler, S.F. Bent, Stanford University
10:40am SS2-MoM8
Adsorption of Chiral Enantiomers of 2,3 butanediol on Si(100)
J.W. Kim, Fritz-Haber-Institute der MPG, Germany, M. Carbone, Universita Tor Vergata, Italy, M. Tallarida, J.H. Dil, K. Horn, Fritz-Haber-Institute der MPG, Germany, M.P. Casaletto, Instituto per lo Studio die Materiali Nanostrutturati ISMN, Italy, R. Flammini, Istituto de Metodologie Inorganiche e dei Plasmi CNR, Italy, M.N. Piancastelli, Universita Tor Vergata, Italy
11:00am SS2-MoM9
Self Assembly on Si(114)-(2x1): Molecular Attachment Via Alkene Functional Groups
D.E. Barlow, A.R. Laracuente, L.A. Baker, L.J. Whitman, J.N. Russell, Jr., Naval Research Laboratory
11:20am SS2-MoM10
Adsorption of Cata-condensed Aromatic Compounds on Si(100)
K. Okamura, Y. Hosoi, Y. Kimura, H. Ishii, M. Niwano, Tohoku University, Japan
11:40am SS2-MoM11
Ideal Methyl Termination of the Si(111) Surface
T. Yamada, M. Kawai, RIKEN, Japan, A. Wawro, Polish Academy of Sciences, Poland, S. Suto, A. Kasuya, Tohoku University, Japan