AVS 51st International Symposium
    Surface Science Monday Sessions
       Session SS2-MoM

Paper SS2-MoM2
Chemistry on Surfaces of Thin Films and at Thin Film/Silicon Buried Interface: Vinyltrimethylsilane and (hfac)Cu(VTMS) on Si(100)-2x1 and on TiCN/Si(100)

Monday, November 15, 2004, 8:40 am, Room 210C

Session: Functionalization of Semiconductor Surfaces
Presenter: A.V. Teplyakov, University of Delaware
Authors: A.V. Teplyakov, University of Delaware
L. Pirolli, University of Delaware
Correspondent: Click to Email
Surface chemistry of vinyltrimethylsilane (VTMS) and (hfac)Cu(VTMS) on Si(100)-2x1 surface covered with several nm thick TiCN films formed from tetrakis-(dimethylamino)-titanium has been investigated using multiple internal reflection Fourier-transform infrared spectroscopy (MIR-FTIR), Auger electron spectroscopy (AES) and thermal desorption mass spectrometry. The structure of the films has been analyzed using time-of-flight secondary ion mass spectrometry and atomic force microscopy. This unique combination of surface analytical techniques allows one to follow chemical and physical changes at the surface of the system, within the thin film, and at the thin film/silicon interface. VTMS was found to adsorb molecularly both on Si(100)-2x1 and on the surface of the TiCN thin film at cryogenic temperatures (100 K), while it exhibits chemisorption if dosed at room temperature. Multiple reactions involving VTMS on both surfaces occur upon thermal annealing: molecular desorption around 400 K, formation and desorption of propylene by 500 K, decomposition leading to the release of silicon-containing products around 800 K. On a clean Si(100)-2x1, surface decomposition leading to the production of silicon carbide and the release of hydrogen takes place at 800 K. This chemistry is markedly different from the previously reported behavior of VTMS on Si(111)-7x7 surface resulting in 100% conversion to silicon carbide. (hfac)Cu(VTMS) chemistry, in particular the role of the VTMS ligand and the decomposition products, has also been studied both on clean Si(100)-2x1 and on a TiCN film deposited on silicon. A comparison of these studies with previous aluminum precursor chemistry will be discussed.