| AVS 51st International Symposium | |
| Semiconductors | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | SC-WeA1 Invited Paper Growth and Properties of Dilute Nitride Semiconductors with a Bismuth Surfactant T. Tiedje, D,A, Beaton, S. Tixier, M.B. Whitwick, E.C. Young, N.R. Zangenberg, University of British Columbia, Canada, S. Francoeur, National Renewable Energy Laboratory |
| 2:40pm | SC-WeA3 Nitrogen Incorporation in GaAsN Films and GaAsN/GaAs Superlattices H.A. McKay, M. Reason, X. Weng, N. Rudawski, W. Ye, V. Rotberg, R.S. Goldman, University of Michigan |
| 3:00pm | SC-WeA4 Optical Properties of GaAs@sub 1-x@N@sub x@: A Tight Binding and Variable Angle Spectroscopic Ellipsometry Study S. Turcotte, S. Larouche, J.-N. Beaudry, N. Shtinkov, L. Martinu, R.A. Masut, École Polytechnique de Montréal, Canada, R. Leonelli, Université de Montréal, Canada, P. Desjardins, École Polytechnique de Montréal, Canada |
| 3:20pm | SC-WeA5 Growth Modes of InN on Sapphire (0001) with GaN Buffer Layers S.R. Leone, University of California, B. Liu, D.X. Chen, Lawrence Berkeley National Laboratory, T. Kitajima, National Defense Academy of Japan |
| 3:40pm | SC-WeA6 Energy Gap and Stokes-like Shift in Cubic In@sub x@ Ga@sub 1-x@N Epitaxial Layers DG Pacheco-Salazar, J.R.L. Fernandez, University of Sao Paulo, Brazil, J. Soares, University of Illinois at Urbana Champaign, J.R. Leite, University of Sao Paulo, Brazil, F. Cerdeira, E.A. Meneses, University of Campinas, Brazil, S.F. Li, O. Husberg, D.J. As, K. Lischka, University of Paderborn, Germany |
| 4:00pm | SC-WeA7 Invited Paper InAs-based Heterojunction Bipolar Transistors P.W. Deelman, P.D. Brewer, D.H. Chow, K.R. Elliott, T. Hussain, R.D. Rajavel, S.S. Thomas, III, HRL Laboratories |
| 4:40pm | SC-WeA9 Lattice Constant Differences and Their Affect on the Surface Bonding of In@sub 2@O and Ga@sub 2@O on GaAs and InAs M.J. Hale, D.L. Winn, J.Z. Sexton, M. Passlack, A.C. Kummel, University of California, San Diego |
| 5:00pm | SC-WeA10 An Atomic Understanding of the Sub-Monolayer Interface formed Upon the Deposition of SiO on GaAs(001)-c(2x8)/(2x4)} D.L. Winn, M.J. Hale, J.Z. Sexton, M. Passlack, A.C. Kummel, University of California, San Diego |